XLIM institute pools of equipments and benches allow RF and microwaves test and characterization on components, circuits and materials in linear domain. These equipments can assess various ranges of frequencies according devices to be tested.
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Tried for several years, the cavity method allows to characterize in a very wide domain of frequencies, dielectric materials at room temperature or in temperature. Thanks to a set of varied size cavities, materials characterization can be made in relevant frequencies of telecommunications sector from 2GHz until 90GHz.
Various cavities
The sample must cover all the section of the cavity.
The gap in frequency of the mode of cavity loaded by the sample compared with that of the vacuous cavity allows to raise to the value of its real permittivity.
The comparison between quality factors in charge of the cavity with and without allows to go back up to its dielectric losses tangent.
Section of the cavity Field E @ f0 (TE01δ)
This characterization technique allows to go back to the dielectric properties (ɛ,tgδ) of materials in form of dielectric resonators.
- Engraving machine by laser ablation :
Engraving machine by laser ablation of wavelength 1064 nm and of strong power (20W max). It bases on a system piloted by computer accepting CAO files such as Gerber and IGS (2D and 3D).
This machine allows us ablation of metallic layers for the creation of transmission lines, circuits, ….The strong power of this laser allows ceramic substrats cut of and their drilling (cylindrical vias for example).
"Double- wavelength digital holography microscope in reflection mode (DHM- R2100 from Lyncéetec, Switzerland). It allows real time, 2D and 3D measurements with nanometer-scale resolution of micro-and nanometric devices (NEMS/MEMS, MOEMS etc.), phase-change materials, surface topography, morphology of biological specimens, etc. Equipped with a video stroboscopic module (7.5-ns pulses) allowing measurements in dynamic mode (from 0.1Hz to 25MHz) of switching times, specific resonant frequencies etc."
a. b. c.
a. Not activated MOEMS
b. During MOEMS activation in 1450 kHz
c. The suspended membrane in Z axis in longitudinal sections are illustrated
Caracteristics :
1 m to 500 MHz and 0,3 m to 12 GHz
Weight limits : 20 Kg
Caracteristics :
Valentine antenna array on a turntable
Principle :
Elements of the test bench:
Pulse generators (max output voltage 220V, rise time 120ps)
Digital serial analyzer sampling oscilloscope 20GHz
Real time sampling oscilloscope 8GHz
UWB components: probes, attenuators, power dividers, delay lines …
Turntable driven by a controller using GPIB protocol
Broadband reference antennas (XLIM design)
OPTOLAS includes a wide range of lasers, bench of characterization of optical radiations or optical materials and advanced imaging systems. The platform also proposes instruments and systems adapted for laser beam or short pulse shaping.
OPTOLAS manages several oscillators and amplifiers operating in different spectral and temporal ranges:
- Wide bandwidth and wavelength agility (Dl=10nm; Dt=100fs; @0.7µm-1µm)
- Ultra-wide bandwidth (Dl=100nm; Dt=10fs; @0.8µm)
- Compact (Dl=7nm; Dt=180fs; @1.03µm)
- Amplified, telecom central wavelength
- Tunable by OPG from the visible to the mid-infrared
Several benches of characterization have been developed for the use of the research teams of the photonics department and can be accessible through OPTOLAS. Some of them are versatile enough to be adapted to the needs of other users.
Beyond characterization benches, scientific instruments complete the specific means of characterizing the light within the platform.
OPTOLAS includes microscopes which can be coupled to different laser sources. OPTOLAS offers service of high performance instruments for spatial analysis of laser beam with different kinds of cameras and wavefront analyzer.
OPTOLAS has different high resolution imaging benches more specifically dedicated to astronomy. They include:
OPTOLAS proposes devices or components suitable for spatial, spectral or temporal laser beam shaping.
- 2D phase only component operating in reflection (1920x1080 pixels, 8µm pitch, 2p @ 1µm)
- 1D phase and amplitude component operating in transmission (640 pixels)